Tran, H.T.T. and Luong, M.D. and Hoang, N.H. (2020) Modeling of single-electron transistor in advanced design system. In: 2020 International Conference on Green and Human Information Technology, ICGHIT 2020, 5 February 2020 through 7 February 2020.
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Abstract
Single-electron transistor (SET) was successfully modeled in Advanced Design System (ADS) software. Simulation of the model in ADS (modeled SET) showed typical characteristics of SET including Coulomb blockade (CB) region and Coulomb oscillations. The simulated results of the modeled SET were compared with those of a commercial SIMON simulator in certain ranges of drain-source voltage and temperature validating accuracy of the modeling method. © 2020 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ICGHIT49656.2020.00023 |
| Uncontrolled Keywords: | Capacitance measurement; Design; Advanced design system; Advanced design system softwares; Coulomb oscillation; Drain-source voltage; Model method; Simulated results; Single electron transistors |
| Additional Information: | Conference code: 159120. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9061 |
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