Ha, D.D. and Tuan, T.T. and Volcheck, V. and Stempitsky, V. (2019) Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.
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Abstract
The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction. © 2019 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ATC.2019.8924506 |
| Uncontrolled Keywords: | Buffer layers; Electron mobility; Gallium nitride; III-V semiconductors; Iron; Nitrides; Poisson equation; Acceptor centers; Continuity equations; Device physics; Elevated temperature; Heat flow equations; Self-heating effect; Thermal simulations; High electron mobility transistors |
| Additional Information: | Conference code: 155872. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9238 |
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