Ha, D.D. and Trung, T.T. and Quang, N.T. and Lovshenko, I. and Khanko, V. and Stempitsky, V. (2019) Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.
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Abstract
The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm2/mg, 10.1 MeV.cm2/mg, 18.8 MeV.cm2/mg, 55.0 MeV.cm2/mg, corresponding to nitrogen ions15N+4with energy E = 1.87 MeV, argon40Ar+12with energy E = 372 MeV, ferrum56Fe+15 with energy E = 523 MeV, xenon131Xe+35 with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature. © 2019 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ATC.2019.8924508 |
| Uncontrolled Keywords: | Charged particles; Energy transfer; Ionizing radiation; Radiation hardening; Device simulations; Electrical characteristic; Heavy charged particles; Linear energy transfer; MOS-FET; Motion trajectories; Nitrogen ions; Single event upsets; MOSFET devices |
| Additional Information: | Conference code: 155872. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9239 |
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