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Study of injection locking effect in terahertz resonant tunneling diode oscillators

Ta, M.V. and Manh, L.D. and Hoang, N.H. (2017) Study of injection locking effect in terahertz resonant tunneling diode oscillators. In: 10th International Conference on Advanced Technologies for Communications, ATC 2017, 18 October 2017 through 20 October 2017.

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Abstract

In this article the injection locking effect in terahertz (THz) resonant tunneling diode (RTD) oscillators is studied using a circuit simulation method. The simulation model is implemented in a popular simulator called Keysight ADS for ease of use and effective investigation. The locking phenomenon is successfully observed. Pulling range, locking range, locking conditions and influence of antenna resistance on locking range of the effect are carefully discussed. We found that locking range is wide, locking effect can be occurred at a relatively low injected power and injection locked RTD THz oscillator array is feasible. © 2017 IEEE.

Item Type: Conference or Workshop Item (Paper)
Divisions: Faculties > Faculty of Radio-Electronic Engineering
Identification Number: 10.1109/ATC.2017.8167636
Uncontrolled Keywords: Circuit simulation; Oscillators (electronic); Resonant tunneling; Temperature measuring instruments; Tunnel diode oscillators; Tunnel diodes; Antenna resistance; Circuit simulation methods; Injection locked; Injection-locking; Locking effects; Locking phenomenon; Resonant tunneling diode oscillators; Simulation model; Resonant tunneling diodes
Additional Information: Conference code: 133552. Language of original document: English.
URI: http://eprints.lqdtu.edu.vn/id/eprint/9662

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