Volchek, V. and Lovshenko, I. and Stempitsky, V. and Dinh Ha, D. and Belous, A. and Saladukha, V. (2016) Optimization of structural and technological parameters of the field effect Hall sensor. In: 8th International Conference on Advanced Technologies for Communications, ATC 2015, 14 October 2015 through 16 October 2015.
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Abstract
The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation. © 2015 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ATC.2015.7388410 |
| Uncontrolled Keywords: | Computer software; Hall effect transducers; Optimization; Silicon on insulator technology; Field effects; Hall sensor; MIS structure; Sensitive elements; Silvaco; Software simulation; Technological parameters; Structural optimization |
| Additional Information: | Conference code: 119147. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9853 |
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