LE QUY DON
Technical University
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Number of items: 5.

Article

Hien, N.D. and Cuong, N.Q. and Bui, L.M. and Dinh, P.C. and Nguyen, C.V. and Phuc, H.V. and Hieu, N.V. and Jappor, H.R. and Phuong, L.T.T. and Hoi, B.D. and Nhan, L.C. and Hieu, N.N. (2019) First principles study of single-layer SnSe 2 under biaxial strain and electric field: Modulation of electronic properties. Physica E: Low-Dimensional Systems and Nanostructures, 111. pp. 201-205. ISSN 13869477 Fulltext available

Qkhoa, D. and Nguyen, C.V. and Bui, L.M. and Phuc, H.V. and Hoi, B.D. and Hieu, N.V. and Nha, V.Q. and Huynh, N. and Nhan, L.C. and Hieu, N.N. (2019) Opening a band gap in graphene by C-C bond alternation: A tight binding approach. Materials Research Express, 6 (4). ISSN 20531591 Fulltext available

Le, P.T.T. and Bui, L.M. and Hieu, N.N. and Phuc, H.V. and Amin, B. and Hieu, N.V. and Nguyen, C.V. (2019) Tailoring electronic properties and Schottky barrier in sandwich heterostructure based on graphene and tungsten diselenide. Diamond and Related Materials, 94. pp. 129-136. ISSN 9259635 Fulltext available

Pham, K.D. and Hieu, N.N. and Bui, L.M. and Phuc, H.V. and Hoi, B.D. and Tu, L.T.N. and Bach, L.G. and Ilyasov, V.V. and Amin, B. and Idrees, M. and Nguyen, C.V. (2019) Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure. Chemical Physics Letters, 716. pp. 155-161. ISSN 92614 Fulltext available

Le, P.T.T. and Hieu, N.N. and Bui, L.M. and Phuc, H.V. and Hoi, B.D. and Amin, B. and Nguyen, C.V. (2018) Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: Effect of strain and electric field. Physical Chemistry Chemical Physics, 20 (44). pp. 27856-27864. ISSN 14639076

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