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Vu, T.V. and Pham, K.D. and Pham, T.N. and Vo, D.D. and Dang, P.T. and Nguyen, C.V. and Phuc, H.V. and Binh, N.T.T. and Hoat, D.M. and Hieu, N.N. (2020) First-principles prediction of chemically functionalized InN monolayers: Electronic and optical properties. RSC Advances, 10 (18). pp. 10731-10739. ISSN 20462069

Pham, K.D. and Vu, T.V. and Pham, T.N. and Vo, D.D. and Dang, P.T. and Hoat, D.M. and Nguyen, C.V. and Phuc, H.V. and Tu, L.T.N. and Van, L.C. and Tong, H.D. and Binh, N.T.T. and Hieu, N.N. (2020) Tuning the electronic, photocatalytic and optical properties of hydrogenated InN monolayer by biaxial strain and electric field. Chemical Physics, 532: 110677. ISSN 3010104

Vu, T.V. and Lavrentyev, A.A. and Thuan, D.V. and Nguyen, C.V. and Khyzhun, O.Y. and Gabrelian, B.V. and Tran, K.C. and Luong, H.L. and Tung, P.D. and Pham, K.D. and Dang, P.T. and Vo, D.D. (2019) Electronic properties and optical behaviors of bulk and monolayer ZrS2: A theoretical investigation. Superlattices and Microstructures, 125. pp. 205-213. ISSN 7496036

Vu, T.V. and Tong, H.D. and Nguyen, T.K. and Nguyen, C.V. and Lavrentyev, A.A. and Khyzhun, O.Y. and Gabrelian, B.V. and Luong, H.L. and Pham, K.D. and Dang, P.T. and Vo, D.D. (2019) Enhancement of monolayer SnSe light absorption by strain engineering: A DFT calculation. Chemical Physics, 521. pp. 5-13. ISSN 3010104