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Vu, T.V. and Hiep, N.T. and Hoa, V.T. and Nguyen, C.V. and Phuc, H.V. and Hoi, B.D. and Kartamyshev, A.I. and Hieu, N.N. (2024) Piezoelectric GaGeX2 (X = N, P, and As) semiconductors with Raman activity and high carrier mobility for multifunctional applications: a first-principles simulation. RSC Advances, 14 (44). pp. 32053-32062. ISSN 20462069