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Faraji, M. and Bafekry, A. and Fadlallah, Mohamed M. and Jappor, H.R. and Nguyen, Chuong V. and Ghergherehchi, M. (2022) Two-dimensional XY monolayers (X = Al, Ga, In; Y = N, P, As) with a double layer hexagonal structure: A first-principles perspective. Applied Surface Science, 590. p. 152998. ISSN 01694332

Bafekry, A. and Mortazavi, B. and Faraji, M. and Shahrokhi, M. and Shafique, A. and Jappor, H.R. and Nguyen, C. and Ghergherehchi, M. and Feghhi, S.A.H. (2021) Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure. Scientific Reports, 11 (1): 10366. ISSN 20452322

Obeid, M.M. and Stampfl, C. and Bafekry, A. and Guan, Z. and Jappor, H.R. and Nguyen, C.V. and Naseri, M. and Hoat, D.M. and Hieu, N.N. and Krauklis, A.E. and Vu, T.V. and Gogova, D. (2020) First-principles investigation of nonmetal doped single-layer BiOBr as a potential photocatalyst with a low recombination rate. Physical Chemistry Chemical Physics, 22 (27). pp. 15354-15364. ISSN 14639076

Vo, D.D. and Vu, T.V. and Al-Qaisi, S. and Tong, H.D. and Le, T.S. and Nguyen, C.V. and Phuc, H.V. and Luong, H.L. and Jappor, H.R. and Obeid, M.M. and Hieu, N.N. (2020) Janus monolayer PtSSe under external electric field and strain: A first principles study on electronic structure and optical properties. Superlattices and Microstructures, 147: 106683. ISSN 7496036

Nguyen, H.T.T. and Vu, T.V. and Binh, N.T.T. and Hoat, D.M. and Hieu, N.V. and Anh, N.T.T. and Nguyen, C.V. and Phuc, H.V. and Jappor, H.R. and Obeid, M.M. and Hieu, N.N. (2020) Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications. Chemical Physics, 529: 110543. ISSN 3010104

Hien, N.D. and Cuong, N.Q. and Bui, L.M. and Dinh, P.C. and Nguyen, C.V. and Phuc, H.V. and Hieu, N.V. and Jappor, H.R. and Phuong, L.T.T. and Hoi, B.D. and Nhan, L.C. and Hieu, N.N. (2019) First principles study of single-layer SnSe 2 under biaxial strain and electric field: Modulation of electronic properties. Physica E: Low-Dimensional Systems and Nanostructures, 111. pp. 201-205. ISSN 13869477

Pham, K.D. and Vi, V.T.T. and Thuan, D.V. and Phuong, L.T.T. and Hoa, L.T. and Hieu, N.V. and Nguyen, C.V. and Phuc, H.V. and Jappor, H.R. and Cuong, N.Q. and Hoi, B.D. and Hieu, N.N. (2019) Tunable electronic properties of InSe by biaxial strain: From bulk to single-layer. Materials Research Express, 6 (11): 115002. ISSN 20531591