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Vu, T.V. and Anh, N.T.T. and Hoat, D.M. and Tran, D.P. and Tong, H.D. and Luong, H.L. and Hieu, L.M. and Nguyen, C.V. and Phuc, H.V. and Binh, N.T.T. and Hieu, N.N. (2020) Electronic, optical and photocatalytic properties of fully hydrogenated GeC monolayer. Physica E: Low-Dimensional Systems and Nanostructures, 117: 113857. ISSN 13869477

Vo, D.D. and Vu, T.V. and Al-Qaisi, S. and Tong, H.D. and Le, T.S. and Nguyen, C.V. and Phuc, H.V. and Luong, H.L. and Jappor, H.R. and Obeid, M.M. and Hieu, N.N. (2020) Janus monolayer PtSSe under external electric field and strain: A first principles study on electronic structure and optical properties. Superlattices and Microstructures, 147: 106683. ISSN 7496036

Nguyen, H.T.T. and Hoang, D.-Q. and Dao, T.P. and Nguyen, C.V. and Phuc, H.V. and Hieu, N.N. and Hoat, D.M. and Luong, H.L. and Tong, H.D. and Pham, K.D. and Vu, T.V. (2020) The characteristics of defective ZrS2 monolayers adsorbed various gases on S-vacancies: A first-principles study. Superlattices and Microstructures, 140: 106454. ISSN 7496036

Vu, T.V. and Lavrentyev, A.A. and Thuan, D.V. and Nguyen, C.V. and Khyzhun, O.Y. and Gabrelian, B.V. and Tran, K.C. and Luong, H.L. and Tung, P.D. and Pham, K.D. and Dang, P.T. and Vo, D.D. (2019) Electronic properties and optical behaviors of bulk and monolayer ZrS2: A theoretical investigation. Superlattices and Microstructures, 125. pp. 205-213. ISSN 7496036

Vu, T.V. and Lavrentyev, A.A. and Gabrelian, B.V. and Pham, K.D. and Nguyen, C.V. and Tran, K.C. and Luong, H.L. and Batouche, M. and Parasyuk, O.V. and Khyzhun, O.Y. (2019) Electronic, Optical and Elastic Properties of Cu2CdGeSe4: A First-Principles Study. Journal of Electronic Materials, 48 (1). pp. 705-715. ISSN 3615235

Vu, T.V. and Tong, H.D. and Nguyen, T.K. and Nguyen, C.V. and Lavrentyev, A.A. and Khyzhun, O.Y. and Gabrelian, B.V. and Luong, H.L. and Pham, K.D. and Dang, P.T. and Vo, D.D. (2019) Enhancement of monolayer SnSe light absorption by strain engineering: A DFT calculation. Chemical Physics, 521. pp. 5-13. ISSN 3010104