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Journals peer-reviewed by Scopus

Vi, V.T.T. and Nguyen, C.Q. and Hoi, B.D. and Phuc, H.V. and Nguyen, C.V. and Hieu, N.N. (2022) Chemical functionalization of SnAs monolayer: a first-principles study of SnAsX (X = Cl, Br, and I) monolayers. Journal of Physics D: Applied Physics, 55 (50). ISSN 00223727

Vu, T.V. and Phuc, H.V. and Nguyen, C.V. and Vi, V.T.T. and Kartamyshev, A.I. and Hieu, N.N. (2022) Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers. Physical chemistry chemical physics : PCCP, 24 (27). pp. 16512-16521. ISSN 14639084

Vu, T.V. and Vi, V.T.T. and Phuc, H.V. and Nguyen, C.V. and Poklonski, N.A. and Duque, C.A. and Rai, D.P. and Hoi, B.D. and Hieu, N.N. (2021) Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides. Journal of Physics Condensed Matter, 33 (22): 225503. ISSN 9538984

Vu, T.V. and Vi, V.T.T. and Nguyen, C.V. and Phuc, H.V. and Hieu, N.N. (2020) Computational prediction of electronic and optical properties of Janus Ga2SeTe monolayer. Journal of Physics D: Applied Physics, 53 (45): 455302. ISSN 223727

Nguyen, C.V. and Vi, V.T.T. and Phuong, L.T.T. and Hoi, B.D. and Hoa, L.T. and Hieu, N.N. and Phuc, H.V. and Khang, P.D. (2020) Electronic structure and band alignment of Blue Phosphorene/Janus ZrSSe heterostructure: A first principles study. Physica E: Low-Dimensional Systems and Nanostructures, 124: 114369. ISSN 13869477

Nguyen, H.T.T. and Vi, V.T.T. and Vu, T.V. and Phuc, H.V. and Nguyen, C.V. and Tong, H.D. and Hoa, L.T. and Hieu, N.N. (2020) Janus Ga2STe monolayer under strain and electric field: Theoretical prediction of electronic and optical properties. Physica E: Low-Dimensional Systems and Nanostructures, 124: 114358. ISSN 13869477

Vo, D.D. and Vi, V.T.T. and Dao, T.P. and Vu, T.V. and Phuc, H.V. and Hieu, N.N. and Binh, N.T.T. and Nguyen, C.V. (2020) Stacking and electric field effects on the band alignment and electronic properties of the GeC/GaSe heterostructure. Physica E: Low-Dimensional Systems and Nanostructures, 120: 114050. ISSN 13869477

Khoa, D.Q. and Nguyen, D.T. and Nguyen, C.V. and Vi, V.T.T. and Phuc, H.V. and Phuong, L.T.T. and Hoi, B.D. and Hieu, N.N. (2019) Modulation of electronic properties of monolayer InSe through strain and external electric field. Chemical Physics, 516. pp. 213-217. ISSN 3010104

Pham, K.D. and Vi, V.T.T. and Thuan, D.V. and Phuong, L.T.T. and Hoa, L.T. and Hieu, N.V. and Nguyen, C.V. and Phuc, H.V. and Jappor, H.R. and Cuong, N.Q. and Hoi, B.D. and Hieu, N.N. (2019) Tunable electronic properties of InSe by biaxial strain: From bulk to single-layer. Materials Research Express, 6 (11): 115002. ISSN 20531591

Pham, K.D. and Vi, V.T.T. and Thuan, D.V. and Hieu, N.V. and Nguyen, C.V. and Phuc, H.V. and Hoi, B.D. and Phuong, L.T.T. and Cuong, N.Q. and Lu, D.V. and Hieu, N.N. (2019) Tuning the electronic properties of GaS monolayer by strain engineering and electric field. Chemical Physics, 524. pp. 101-105. ISSN 3010104