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Nguyen, C.V. and Hieu, N.N. (2016) Effect of biaxial strain and external electric field on electronic properties of MoS2 monolayer: A first-principle study. Chemical Physics, 468. pp. 9-14. ISSN 3010104

Muoi, D. and Hieu, N.N. and Phung, H.T.T. and Phuc, H.V. and Amin, B. and Hoi, B.D. and Hieu, N.V. and Nhan, L.C. and Nguyen, C.V. and Le, P.T.T. (2019) Electronic properties of WS2 and WSe2 monolayers with biaxial strain: A first-principles study. Chemical Physics, 519. pp. 69-73. ISSN 3010104

Vo, D.D. and Idrees, M. and Pham, V.T. and Vu, T.V. and Nguyen, S.-T. and Phuc, H.V. and Hieu, N.N. and Binh, N.T.T. and Amin, B. and Nguyen, C.V. (2020) Electronic structure and optical performance of PbI2/SnSe2 heterostructure. Chemical Physics, 533: 110736. ISSN 3010104

Vu, T.V. and Tong, H.D. and Nguyen, T.K. and Nguyen, C.V. and Lavrentyev, A.A. and Khyzhun, O.Y. and Gabrelian, B.V. and Luong, H.L. and Pham, K.D. and Dang, P.T. and Vo, D.D. (2019) Enhancement of monolayer SnSe light absorption by strain engineering: A DFT calculation. Chemical Physics, 521. pp. 5-13. ISSN 3010104

Do, T.-N. and Idrees, M. and Amin, B. and Hieu, N.N. and Phuc, H.V. and Hoa, L.T. and Nguyen, C.V. (2020) First principles study of structural, optoelectronic and photocatalytic properties of SnS, SnSe monolayers and their van der Waals heterostructure. Chemical Physics, 539: 110939. ISSN 3010104

Khoa, D.Q. and Nguyen, D.T. and Nguyen, C.V. and Vi, V.T.T. and Phuc, H.V. and Phuong, L.T.T. and Hoi, B.D. and Hieu, N.N. (2019) Modulation of electronic properties of monolayer InSe through strain and external electric field. Chemical Physics, 516. pp. 213-217. ISSN 3010104

Hieu, N.N. and Hieu, N.V. and Le-Quoc, H. and Vi, V.T.T. and Nguyen, C.Q. and Nguyen, C.V. and Phuc, H.V. and Nguyen-Ba, K. (2024) Spin–orbit coupling tunable electronic properties of 1T′-MoS2 and ternary Janus 1T′-MoSSe monolayers: Theoretical prediction. Chemical Physics, 583.

Pham, K.D. and Nguyen, C.V. and Phung, H.T.T. and Phuc, H.V. and Amin, B. and Hieu, N.N. (2019) Strain and electric field tunable electronic properties of type-II band alignment in van der Waals GaSe/MoSe 2 heterostructure. Chemical Physics, 521. pp. 92-99. ISSN 3010104

Nguyen, H.T.T. and Vu, T.V. and Binh, N.T.T. and Hoat, D.M. and Hieu, N.V. and Anh, N.T.T. and Nguyen, C.V. and Phuc, H.V. and Jappor, H.R. and Obeid, M.M. and Hieu, N.N. (2020) Strain-tunable electronic and optical properties of monolayer GeSe: Promising for photocatalytic water splitting applications. Chemical Physics, 529: 110543. ISSN 3010104

Pham, K.D. and Vi, V.T.T. and Thuan, D.V. and Hieu, N.V. and Nguyen, C.V. and Phuc, H.V. and Hoi, B.D. and Phuong, L.T.T. and Cuong, N.Q. and Lu, D.V. and Hieu, N.N. (2019) Tuning the electronic properties of GaS monolayer by strain engineering and electric field. Chemical Physics, 524. pp. 101-105. ISSN 3010104

Pham, K.D. and Vu, T.V. and Pham, T.N. and Vo, D.D. and Dang, P.T. and Hoat, D.M. and Nguyen, C.V. and Phuc, H.V. and Tu, L.T.N. and Van, L.C. and Tong, H.D. and Binh, N.T.T. and Hieu, N.N. (2020) Tuning the electronic, photocatalytic and optical properties of hydrogenated InN monolayer by biaxial strain and electric field. Chemical Physics, 532: 110677. ISSN 3010104