Comparison of VOx thin films fabricated on fused quartz and SiO2/Si substrates by metal organic decomposition

VOx thin films were fabricated by metal organic decomposition (MOD) on SiO2/Si and fused quartz substrates. In comparison with the films fabricated on SiO2/Si substrates, the purity of VO2 in the films fabricated on fused quartz substrates was higher. This leads to a 1 order higher resistivity change, about 4 orders of magnitude, and slightly twofold higher temperature coefficient of resistance (TCR), gained at 300 K, at about 4.8%/K. The films fabricated on fused quartz substrates had grain sizes of 150-250 nm, while it was about 200-300nm for the films fabricated on SiO 2/Si substrates. The extrinsic and intrinsic stresses of the films fabricated on fused quartz substrates were higher than those of the films fabricated on SiO2/Si substrates. The transition temperature and hysteresis loop width of the films fabricated on fused quartz substrates were 52 and 2 °C, which were 3 °C lower and 1 °C narrower than those of the films fabricated on SiO2/Si substrates, respectively. © 2014 The Japan Society of Applied Physics.