Ha, D.D. and Volcheck, V. and Stempitsky, V. and Trung, T.T. (2022) DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System. In: Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022, 20 October 2022 Through 22 October 2022, Hanoi.
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The DC, small-signal AC and breakdown characteristics of the GaN high electron mobility transistor with a few-layer graphene heat-removal system were simulated. The effect of the distance between the gate and the graphene heat-removal element on the device behavior was analyzed. The simulations reveal that extending the graphene layers towards the gate does not influence the DC characteristics but enhances greatly the AC performance quantities. From the other side, a close proximity between the gate and the graphene layers leads to a higher electric field and, consequently, to a reduced breakdown voltage. © 2022 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Special Equipments |
| Identification Number: | 10.1109/ATC55345.2022.9943047 |
| Uncontrolled Keywords: | Electric fields; Electron mobility; Gallium nitride; Graphene; Graphene transistors; III-V semiconductors, AC performance; Breakdown characteristics; Close proximity; DC characteristics; Few-layer graphene; Graphene layers; Heat removal; Heat removal system; High electron-mobility transistors; Self-heating effect, High electron mobility transistors |
| Additional Information: | Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022 ; Conference Date: 20 October 2022 Through 22 October 2022; Conference Code:184412 |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/10614 |
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