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Quantum magneto-transport properties of monolayers MoSi2N4, WSi2N4, and MoSi2As4

Hoa, L.T. and Kubakaddi, S.S. and Nguyen, C.V. and Hieu, N.N. and Phuc, H.V. (2023) Quantum magneto-transport properties of monolayers MoSi2N4, WSi2N4, and MoSi2As4. Journal of Physics Condensed Matter, 35 (43): 435702. ISSN 09538984

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Abstract

We study the transport properties of monolayers MoSi2N4, WSi2N4, and MoSi2As4 in a perpendicular magnetic field. The Landau level (LL) band structures including spin and exchange field effects are derived and discussed using a low-energy effective model. We show that the LLs band structures of these materials are similar to those of phosphorene and transition-metal dichalcogenides rather than graphene or silicene. The combination of strong spin-orbit coupling and exchange fields reduces the degradation of the LLs, leading to new plateaus in the Hall conductivity and Hall resistivity and new peaks in the longitudinal conductivity and longitudinal resistivity. The effect of the exchange field, carrier density, and LLs band structure on the conductivities and resistivities have been investigated. At high temperatures, the steps in Hall conductivity and resistivity plateaus disappear and reduce to their corresponding classical forms. © 2023 IOP Publishing Ltd.

Item Type: Article
Divisions: Faculties > Faculty of Mechanical Engineering
Identification Number: 10.1088/1361-648X/ace8df
Uncontrolled Keywords: Band structure; Quantum chemistry; Silicene; Silicon compounds; Transition metals; Transport properties, Conductivity and resistivity; Conductivity/ resistivities; Exchange fields; Hall conductivity; Hall resistivity; Landau levels; Magneto transport properties; Monolayer MSi2Z4; Perpendicular magnetic fields; Quantum magneto-transport property, Monolayers
URI: http://eprints.lqdtu.edu.vn/id/eprint/10870

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