Dang, Hoang Anh and Dung, Tran Van and Luong, Duy Manh and Dai, Xuan Loi and Do, Phuong Nhung and Trong, Nghia Hoang and Doan, Nguyen Thi Phi and Huy, Long Tran (2024) A Novel Gan Hemt Cascode Microwave Power Amplifier for Wireless Communications. Journal of Engineering Science and Technology Review, 17 (6). 113 – 119. ISSN 17919320
Full text not available from this repository. (Upload)Abstract
A novel cascode-type GaN HEMT circuit is proposed in the present study. The independent bias method is used to improve linearity as well as efficiency. At one tone operation, the proposed power amplifier of 2.1-GHz has a power gain of 16.5 dB, and 32 dBm output power with an efficiency of 66. In addition, the proposed amplifier achieves an efficiency of 35.8 and 19.7-dB power gain with a IMD3 level of -35 dBc, for a 4-MHz spacing two-tone operation. The proposed amplifier is compared with a conventional amplifier. It shows that the proposed amplifier offers superior performance over the conventional one in terms of efficiency as well as linearity. © (2024), (International Hellenic University School of Science and Technology). All rights reserved.
| Item Type: | Article |
|---|---|
| Divisions: | Offices > Office of International Cooperation |
| Identification Number: | 10.25103/jestr.176.14 |
| Uncontrolled Keywords: | Adaptive control systems; Cascode amplifiers; High electron mobility transistors; III-V semiconductors; Power HEMT; Wide band gap semiconductors; Adaptive Control; Cascode; GaN HEMTs; IMD3; Microwave power amplifier; Output power; Power; Power gains; SSPA; Wireless communications; Gallium nitride |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/11495 |
Actions (login required)
- View Item