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Computer simulation of the operational characteristics of a microstrip silicon detector

Dao, H.D. and Lovshenko, I. and Roshchenko, P. and Shandarovich, V. and Stempitsky, V. and Tran, T.T. (2021) Computer simulation of the operational characteristics of a microstrip silicon detector. Semiconductor Science and Technology, 36 (9): 95004. ISSN 2681242

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Abstract

This paper presents the results of preliminary device and technological simulation and optimization of the operational characteristics of semiconductor microstrip detectors. We investigated the influence of heavy charged particles with linear energy transfers of 1.81 MeV cm2 mg−1, 18.8 MeV cm2 mg−1 and 55.0 MeV cm2 mg−1, corresponding to nitrogen 15N+4 ions with an energy E = 1.87 MeV, iron 56Fe+15 ions with an energy E = 523 MeV and xenon 131Xe+35 ions with an energy E = 1217 MeV, as well as the angle of incidence of the particles and the temperature and voltage on the substrate, on the characteristics of the detector. To improve the characteristics of the detector, a screening experiment was carried out and a series of optimization calculations were performed. The results will be used for the manufacture and testing of design parameters for an experimental batch of the investigated devices. © 2021 IOP Publishing Ltd Printed in the UK

Item Type: Article
Divisions: Faculties > Faculty of Radio-Electronic Engineering
Identification Number: 10.1088/1361-6641/ac09cf
Uncontrolled Keywords: Energy transfer; Silicon detectors; Heavy charged particles; Linear energy transfer; Micro-strip detectors; Microstrip silicon detectors; Operational characteristics; Optimization calculation; Screening experiments; Simulation and optimization; Ions
Additional Information: Language of original document: English.
URI: http://eprints.lqdtu.edu.vn/id/eprint/8585

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