Vu, T.V. and Vi, V.T.T. and Phuc, H.V. and Nguyen, C.V. and Poklonski, N.A. and Duque, C.A. and Rai, D.P. and Hoi, B.D. and Hieu, N.N. (2021) Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides. Journal of Physics Condensed Matter, 33 (22): 225503. ISSN 9538984
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Inspired by the successfully experimental synthesis of Janus structures recently, we systematically study the electronic, optical, and electronic transport properties of Janus monolayers In2 XY (X/Y = S, Se, Te with X ≠ Y) in the presence of a biaxial strain and electric field using density functional theory. Monolayers In2 XY are dynamically and thermally stable at room temperature. At equilibrium, both In2STe and In2SeTe are direct semiconductors while In2SSe exhibits an indirect semiconducting behavior. The strain significantly alters the electronic structure of In2 XY and their photocatalytic activity. Besides, the indirect-direct gap transitions can be found due to applied strain. The effect of the electric field on optical properties of In2 XY is negligible. Meanwhile, the optical absorbance intensity of the Janus In2 XY monolayers is remarkably increased by compressive strain. Also, In2 XY monolayers exhibit very low lattice thermal conductivities resulting in a high figure of merit ZT, which makes them potential candidates for room-temperature thermoelectric materials. © 2021 IOP Publishing Ltd.
Item Type: | Article |
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Divisions: | Faculties > Faculty of Mechanical Engineering |
Identification Number: | 10.1088/1361-648X/abf381 |
Uncontrolled Keywords: | Density functional theory; Electric fields; Electronic structure; Monolayers; Optical properties; Photocatalytic activity; Selenium compounds; Semiconducting selenium compounds; Semiconducting tellurium compounds; Thermal conductivity; Thermoelectric equipment; Thermoelectricity; Compressive strain; Electronic transport properties; High figure of merit ZT; Lattice thermal conductivity; Optical absorbance; Semiconducting behavior; Thermo-Electric materials; Thermoelectric properties; Semiconducting indium compounds |
Additional Information: | Language of original document: English. |
URI: | http://eprints.lqdtu.edu.vn/id/eprint/8636 |