Bafekry, A. and Faraji, M. and Abdollahzadeh Ziabari, A. and Fadlallah, M.M. and Nguyen, C.V. and Ghergherehchi, M. and Feghhi, S.A.H. (2021) A van der Waals heterostructure of MoS2/MoSi2N4: A first-principles study. New Journal of Chemistry, 45 (18). pp. 8291-8296. ISSN 11440546
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Abstract
Motivated by the successful preparation of MoSi2N4 monolayers in the last year [Y.-L. Hong et al., Science, 2020, 369, 670-674], we investigate the structural, electronic and optical properties of the MoS2/MoSi2N4 heterostructure (HTS). The phonon dispersion and the binding energy calculations refer to the stability of the HTS. The heterostructure has an indirect bandgap of 1.26 (1.84) eV using PBE (HSE06) which is smaller than the corresponding value of MoSi2N4 and MoS2 monolayers. We find that the work function of the MoS2/MoSi2N4 HTS is smaller than the corresponding value of its individual monolayers. The heterostructure structure can enhance the absorption of light spectra not only in the ultraviolet region but also in the visible region as compared to MoSi2N4 and MoS2 monolayers. The refractive index behaviour of the HTS can be described as the cumulative effect which is well described in terms of a combination of the individual effects (the refractive index of MoSi2N4 and MoS2 monolayers). © 2021 The Royal Society of Chemistry and the Centre National de la Recherche Scientifique.
Item Type: | Article |
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Divisions: | Faculties > Faculty of Mechanical Engineering |
Identification Number: | 10.1039/d1nj00344e |
Uncontrolled Keywords: | Binding energy; Calculations; Layered semiconductors; Molybdenum compounds; Monolayers; Refractive index; Silicon; Van der Waals forces; Cumulative effects; Electronic and optical properties; Energy calculation; First-principles study; Light spectrum; Phonon dispersions; Ultraviolet region; Visible region; Silicon compounds; article; calculation; light absorption; phonon; refraction index |
Additional Information: | Language of original document: English. |
URI: | http://eprints.lqdtu.edu.vn/id/eprint/8652 |