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Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf: Y = S, Se) monolayers

Alam, Q. and Idrees, M. and Muhammad, S. and Nguyen, C.V. and Shafiq, M. and Saeed, Y. and Din, H.U. and Amin, B. (2021) Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf: Y = S, Se) monolayers. RSC Advances, 11 (20). pp. 12189-12199. ISSN 20462069

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Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf Y = S, Se) monolayers. RSC Advances, 11 (20). pp. 12189-12199. ISSN 20462069.pdf

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Abstract

Using first-principles calculations, the geometry, electronic structure, optical and photocatalytic performance of blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their corresponding van der Waal heterostructures in three possible stacking patterns, are investigated. BlueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers are indirect bandgap semiconductors. A tensile strain of 8(10)% leads to TiSeO(ZrSeO) monolayers transitioning to a direct bandgap of 1.30(1.61) eV. The calculated binding energy and AIMD simulation show that unstrained(strained) blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their heterostructures are thermodynamically stable. Similar to the corresponding monolayers, blueP-XYO (X = Ti, Zr, Hf: Y = S, Se) vdW heterostructures in three possible stacking patterns are indirect bandgap semiconductors with staggered band alignment, except blueP-TiSeO vdW heterostructure, which signifies straddling band alignment. Absorption spectra show that optical transitions are dominated by excitons for blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and the corresponding vdW heterostructures. BothEVBandECBin TiSO, ZrSO, ZrSeO and HfSO monolayers achieve energetically favorable positions, and therefore, are suitable for water splitting at pH = 0, while TiSeO and HfSeO monolayers showed good response for reduction and fail to oxidise water. All studied vdW heterostructures also show good response to any produced O2, while specific stacking reduces H+to H2 © The Royal Society of Chemistry 2021.

Item Type: Article
Divisions: Faculties > Faculty of Mechanical Engineering
Identification Number: 10.1039/d0ra10827h
Uncontrolled Keywords: Alignment; Binding energy; Calculations; Electronic structure; Energy gap; Hafnium compounds; Heterojunctions; Monolayers; Selenium compounds; Semiconducting selenium; Tensile strain; Titanium compounds; Tungsten compounds; Van der Waals forces; Zirconium compounds; Band alignments; First-principles calculation; Indirect bandgap semiconductors; Photocatalytic performance; Stacking effect; Stacking patterns; Thermodynamically stable; Water splitting; Sulfur compounds
Additional Information: Language of original document: English. All Open Access, Gold.
URI: http://eprints.lqdtu.edu.vn/id/eprint/8671

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