Manh, L.D. and Huong, T.T.T. and Doanh, B.Q. and Son, V.Q. (2020) A 3-Stacked GaN HEMT Power Amplifier with Independently Biased Technique. In: 6th EAI International Conference on Industrial Networks and Intelligent Systems, INISCOM 2020, 24 August 2020 through 28 August 2020.
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Abstract
A design of 3-stacked GaN high-electron-mobility transistor radio-frequency power amplifier using independently biased technique is presented. The power amplifier operates at 1.6 GHz for wireless communications applications. By independently setting proper bias conditions, DC power consumption of the power amplifier can be reduced leading to efficiency enhancement without output power degradation. A performance comparison of the proposed power amplifier with a conventional 3-stacked power amplifier has been performed. The simulated results indicate that the proposed power amplifier offers superior efficiency over the conventional one. © 2020, ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1007/978-3-030-63083-6_8 |
| Uncontrolled Keywords: | Energy efficiency; Gallium nitride; High electron mobility transistors; High frequency amplifiers; III-V semiconductors; Intelligent systems; Radio frequency amplifiers; Bias conditions; DC power consumption; Efficiency enhancement; Gan high electron mobility transistors; Output power degradation; Performance comparison; Simulated results; Wireless communications; Power amplifiers |
| Additional Information: | Conference code: 252119. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9104 |
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