Phuong, L.T.T. and Hoi, B.D. and Dung, P.V. and Hieu, N.N. and Nguyen, C.V. and Phuc, H.V. and Dung, N.T. and Khang, P.D. (2019) Cyclotron–phonon resonance line-width in monolayer silicene. Superlattices and Microstructures, 131. pp. 117-123. ISSN 7496036
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Abstract
We theoretically observe the cyclotron–phonon resonance (CPR) in monolayer silicene by considering the magneto-optical absorption power (AP) of the system. The AP is calculated utilising the projection operator technique when a static magnetic field is subjected perpendicularly to the plane of the material and the electron–optical phonon scattering is involved. The absorption spectra show the resonance behaviour where the photon energies at resonant peaks satisfy the cyclotron–phonon (CPR) conditions in which the CPR energy depends linearly on the square root of the magnetic field strength. This dependence is similar to that in graphene and different from that in monolayer MoS2 and conventional low-dimensional semiconductors. The dependence of the full-width at half maximum (FWHM) on the magnetic field strength has the laws similar to those obtained for graphene and monolayer MoS2. However, the FWHM value in silicene is two times smaller than it is in graphene and has the same order as it does in monolayer MoS2. At relatively high temperature (T>300 K), the FWHM for phonon emission differs very little from that for phonon absorption and becomes identical in two cases when T>350 K. © 2019 Elsevier Ltd
Item Type: | Article |
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Divisions: | Faculties > Faculty of Mechanical Engineering |
Identification Number: | 10.1016/j.spmi.2019.06.002 |
Uncontrolled Keywords: | Cyclotrons; Full width at half maximum; Graphene; Layered semiconductors; Light absorption; Magnetic fields; Molybdenum compounds; Monolayers; Resonance; Silicene; Low-Dimensional Semiconductors; Magnetic field strengths; Magneto-optical; Optical phonon scattering; Phonon absorption; Phonon resonance; Projection operator technique; Static magnetic fields; Phonons |
Additional Information: | Language of original document: English. |
URI: | http://eprints.lqdtu.edu.vn/id/eprint/9301 |