Manh, L.D. and Diebold, S. and Nishio, K. and Nishida, Y. and Kim, J. and Mukai, T. and Fujita, M. and Nagatsuma, T. (2018) External Feedback Effect in Terahertz Resonant Tunneling Diode Oscillators. IEEE Transactions on Terahertz Science and Technology, 8 (4). pp. 455-464. ISSN 2156342X
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Abstract
The external feedback effect of a resonant tunneling diode oscillator in terahertz (THz) proximity wireless transmission is modeled and analyzed. The model is based on the circuit modeling of the resonant tunneling diode and the passive structures. We investigate important system parameters such as the reflectivities at the transmitter and the receiver and the power coupling. It is found that the frequency change, the frequency change rate, and the direct-current change are mainly dependent on the reflectivity at the receiver. The received power change is mainly caused by the reflectivity at the transmitter. The simulations agree well with the experimental results. In addition, we demonstrate the high accuracy of our models by clarifying origins of the bit-error-rate change with distance. This demonstrates that the proposed model can be used for the design of a stable THz proximity wireless communication system. The model is also considered to be potentially applicable in other promising THz applications including sensing and radar. © 2011-2012 IEEE.
Item Type: | Article |
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Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
Identification Number: | 10.1109/TTHZ.2018.2842209 |
Uncontrolled Keywords: | Bit error rate; Diodes; Feedback; Radar; Reflection; Resonant tunneling; Transmitters; Tunnel diode oscillators; Wireless telecommunication systems; Passive structures; Resonant tunneling diode oscillators; sensing; Tera Hertz; Transmitter and receiver; Wireless communication system; Wireless communications; Wireless transmissions; Resonant tunneling diodes |
Additional Information: | Language of original document: English. |
URI: | http://eprints.lqdtu.edu.vn/id/eprint/9554 |