Volchek, V. and Stempitsky, V. and Ha, D.D. and Trung, T.T. (2016) Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers. In: 9th International Conference on Advanced Technologies for Communications, ATC 2016, 12 October 2016 through 14 October 2016.
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Abstract
The influence of diamond heat sink layers on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated using numerical simulation in Wachutka's thermodynamically rigorous model of lattice heating. It is shown that the diamond layers can significantly decrease device temperature, thus improving its current-voltage characteristics. Parameters of the diamond heat sink were optimized for the HEMTs on sapphire and silicon substrates. © 2016 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ATC.2016.7764785 |
| Uncontrolled Keywords: | Current voltage characteristics; Diamonds; Electron mobility; Field effect transistors; Gallium nitride; Heat sinks; Optimization; Sapphire; Semiconducting aluminum compounds; AlGaN/GaN high electron mobility transistors; Device temperature; Diamond layers; Electrical characteristic; Lattice heating; Self-heating; Self-heating effect; Silicon substrates; High electron mobility transistors |
| Additional Information: | Conference code: 125210. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9776 |
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