Borovik, A. and Kuleshov, A. and Trung, T.T. (2016) Verification of device model parameters for nanoscale MOSFETs. In: 8th International Conference on Advanced Technologies for Communications, ATC 2015, 14 October 2015 through 16 October 2015.
Verification of device model parameters for nanoscale MOSFETs.pdf
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Abstract
A new approach to nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of adjustment factors, as well as parameter values of classic driftdiffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. A modified direct search method of drift-diffusion model optimization for MOSFET with a 90 nm channel length is developed and used. © 2015 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Faculties > Faculty of Radio-Electronic Engineering |
| Identification Number: | 10.1109/ATC.2015.7388382 |
| Uncontrolled Keywords: | Nanotechnology; Optimization; Quantum chemistry; Quantum theory; Adjustment factors; Direct search methods; Drift-diffusion model; Electrical characteristic; Mobility model; Nanoscale MOSFETs; Quantum mechanical; Transport mechanism; MOSFET devices |
| Additional Information: | Conference code: 119147. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9855 |
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