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Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

Khuat, V. and Chen, T. and Gao, B. and Si, J. and Ma, Y. and Hou, X. (2014) Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching. Applied Physics Letters, 104 (24): 241907. ISSN 36951

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Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching.pdf

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Abstract

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave. © 2014 AIP Publishing LLC.

Item Type: Article
Divisions: Faculties > Faculty of Information Technology
Identification Number: 10.1063/1.4883880
Uncontrolled Keywords: Etching; Fabrication; Hydrofluoric acid; Silicon carbide; Formation mechanism; Incident waves; Mixed solution; Reflected waves; Scanning electronic microscopy; Selective etching; Standing wave; Z-directions; Femtosecond lasers
Additional Information: Language of original document: English.
URI: http://eprints.lqdtu.edu.vn/id/eprint/9977

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