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Journals peer-reviewed by Scopus

Ha, D.D. and Tuan, T.T. and Volcheck, V. and Stempitsky, V. (2019) Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.