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Journals peer-reviewed by Scopus

Ha, D.D. and Volcheck, V. and Stempitsky, V. and Trung, T.T. (2022) DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System. In: Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022, 20 October 2022 Through 22 October 2022, Hanoi.

Ha, D.D. and Tuan, T.T. and Volcheck, V. and Stempitsky, V. (2019) Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.