LE QUY DON
Technical University
VietnameseClear Cookie - decide language by browser settings

Design of An Independently Biased Cascode GaN HEMT Microwave Power Amplifier

Manh, L.D. and Huy Hoang, N. and Duong, B.G. and Chi Hieu, T. (2018) Design of An Independently Biased Cascode GaN HEMT Microwave Power Amplifier. In: 11th International Conference on Advanced Technologies for Communications, ATC 2018, 18 October 2018 through 20 October 2018.

Text
3_paper.pdf

Download (340kB) | Preview

Abstract

We propose an independently biased technique for improving both efficiency and linearity of a cascode GaN HEMT power amplifier at 2.1 GHz. The designed power amplifier achieves power gain of 16.5 dB, output power of 32 dBm at power added efficiency of 66 % for single-tone operation. For two-tone operation with a spacing of 4 MHz, the designed amplifier can achieve a power added efficiency of 35.8 % and a power gain of 19.7 dB at a third order intermodulation distortion of -35 dBc. These achieved performance makes the designed amplifier to be able to effectively apply to various promising wireless communications applications like Long-Time Evolution (LTE) mobile network or radar and WiFi. © 2018 IEEE.

Item Type: Conference or Workshop Item (Paper)
Divisions: Faculties > Faculty of Radio-Electronic Engineering
Identification Number: 10.1109/ATC.2018.8587516
Uncontrolled Keywords: Analog circuits; Efficiency; Gallium nitride; III-V semiconductors; Microwave amplifiers; Power amplifiers; Wi-Fi; GaN HEMTs; Microwave power amplifier; Output power; Power gains; Power-added efficiency; Third order intermodulation distortion; Time evolutions; Wireless communications; Cascode amplifiers
Additional Information: Conference code: 143867. Language of original document: English.
URI: http://eprints.lqdtu.edu.vn/id/eprint/9469

Actions (login required)

View Item
View Item