Pham, B.L. and Nguyen, D.P. and Pham, A.-V. and Le, P.D. (2016) High Power Monolithic pHemt GaAs Limiter for T/R Module. In: 2016 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2016, 23 October 2016 through 26 October 2016.
High Power Monolithic pHemt GaAs Limiter for T-R Module.pdf
Download (400kB) | Preview
Abstract
In this paper, a high power monolithic GaAs limiter for transmit/receive module is presented. While keeping the output power below 100 mW (20 dBm), this limiter can sustain a RF input power up to 4 Watts (36 dBm). The survival input power of this limiter can get up to 10 Watts (40 dBm). This chip obtains a wide bandwidth from 7 to 21 GHz. Within this band, the chip has the insertion loss lower than 2.3 dB and achieves only 1 dB insertion loss in the X-Band from 7 GHz to 12 GHz. © 2016 IEEE.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Divisions: | Institutes > Institute of System Integration |
| Identification Number: | 10.1109/CSICS.2016.7751041 |
| Uncontrolled Keywords: | Gallium arsenide; Insertion losses; High power; Input power; Output power; T/R modules; Transmit/Receive modules; Wide bandwidth; X bands; Semiconducting gallium |
| Additional Information: | Conference code: 125085. Language of original document: English. |
| URI: | http://eprints.lqdtu.edu.vn/id/eprint/9790 |
Actions (login required)
- View Item