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Ha, D.D. and Volcheck, V. and Stempitsky, V. and Trung, T.T. (2022) DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System. In: Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022, 20 October 2022 Through 22 October 2022, Hanoi.

Huyen, N.T. and Ha, D.D. and Hiep, P.T. (2020) Buried objects detection in heterogeneous environment using UWB systems combined with curve fitting method. ICT Express, 6 (4). pp. 348-352. ISSN 24059595

Baranava, M. and Vladislav Volcheck, D.H. and Stempitsky, V. and Ha, D.D. and Tran Tuan, T. (2020) GaN HEMT thermal characteristics evaluation using an integrated approach based on the combined use of first-principles and device simulations. In: 13th International Conference on Advanced Technologies for Communications, ATC 2020, 8 October 2020 through 10 October 2020.

Ha, D.D. and Tuan, T.T. and Volcheck, V. and Stempitsky, V. (2019) Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.

Ha, D.D. and Trung, T.T. and Quang, N.T. and Lovshenko, I. and Khanko, V. and Stempitsky, V. (2019) Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.

Volchek, V. and Stempitsky, V. and Ha, D.D. and Trung, T.T. (2016) Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers. In: 9th International Conference on Advanced Technologies for Communications, ATC 2016, 12 October 2016 through 14 October 2016.