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Conference or Workshop Item

Ha, D.D. and Volcheck, V. and Stempitsky, V. and Trung, T.T. (2022) DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System. In: Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022, 20 October 2022 Through 22 October 2022, Hanoi.

Ha, D.D. and Trung, T.T. and Quang, N.T. and Lovshenko, I. and Khanko, V. and Stempitsky, V. (2019) Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.

Dinh Ha, D. and Stempitsky, V. and Trung, T.T. (2017) Verilog-A based compact model of the silicon hall element. In: 7th International Conference on Integrated Circuits, Design, and Verification, ICDV 2017, 5 October 2017 through 6 October 2017.

Volchek, V. and Stempitsky, V. and Ha, D.D. and Trung, T.T. (2016) Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers. In: 9th International Conference on Advanced Technologies for Communications, ATC 2016, 12 October 2016 through 14 October 2016.

Borovik, A. and Kuleshov, A. and Trung, T.T. (2016) Verification of device model parameters for nanoscale MOSFETs. In: 8th International Conference on Advanced Technologies for Communications, ATC 2015, 14 October 2015 through 16 October 2015.