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Journals peer-reviewed by Scopus

Ha, D.D. and Volcheck, V. and Stempitsky, V. and Trung, T.T. (2022) DC, AC and Breakdown Simulation of the Gallium Nitride High Electron Mobility Transistor with a Few-Layer Graphene Heat-Removal System. In: Conference of 15th International Conference on Advanced Technologies for Communications, ATC 2022, 20 October 2022 Through 22 October 2022, Hanoi.

Dao, H.D. and Lovshenko, I. and Roshchenko, P. and Shandarovich, V. and Stempitsky, V. and Tran, T.T. (2021) Computer simulation of the operational characteristics of a microstrip silicon detector. Semiconductor Science and Technology, 36 (9): 95004. ISSN 2681242

Baranava, M. and Vladislav Volcheck, D.H. and Stempitsky, V. and Ha, D.D. and Tran Tuan, T. (2020) GaN HEMT thermal characteristics evaluation using an integrated approach based on the combined use of first-principles and device simulations. In: 13th International Conference on Advanced Technologies for Communications, ATC 2020, 8 October 2020 through 10 October 2020.

Ha, D.D. and Tuan, T.T. and Volcheck, V. and Stempitsky, V. (2019) Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.

Ha, D.D. and Trung, T.T. and Quang, N.T. and Lovshenko, I. and Khanko, V. and Stempitsky, V. (2019) Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure. In: 12th International Conference on Advanced Technologies for Communications, ATC 2019, 17 October 2019 through 19 October 2019.

Dinh Ha, D. and Stempitsky, V. and Trung, T.T. (2017) Verilog-A based compact model of the silicon hall element. In: 7th International Conference on Integrated Circuits, Design, and Verification, ICDV 2017, 5 October 2017 through 6 October 2017.

Volchek, V. and Lovshenko, I. and Stempitsky, V. and Dinh Ha, D. and Belous, A. and Saladukha, V. (2016) Optimization of structural and technological parameters of the field effect Hall sensor. In: 8th International Conference on Advanced Technologies for Communications, ATC 2015, 14 October 2015 through 16 October 2015.

Volchek, V. and Stempitsky, V. and Ha, D.D. and Trung, T.T. (2016) Suppression of the self-heating effect in AlGaN/GaN high electron mobility transistor by diamond heat sink layers. In: 9th International Conference on Advanced Technologies for Communications, ATC 2016, 12 October 2016 through 14 October 2016.